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May 1998
NDS9945
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These
devices are particularly suited for low voltage applications
such as disk drive motor control, battery powered circuits
where fast switching, low in-line power loss, and resistance
to transients are needed.
Features
3.5 A, 60 V. R DS(ON) = 0.100 ? @ V GS = 10 V,
R DS(ON) = 0.200 ? @ V GS = 4.5 V.
High density cell design for extremely low R DS(ON) .
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT TM -6
SuperSOT TM -8
SO-8
SOT-223
SOIC-16
ND 45
D1
D1
D2
D2
S
99
5
6
4
3
SO-8
pin 1
S1
G1
S2
G2
7
8
2
1
Absolute Maximum Ratings
T A = 25 o C unless other wise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
NDS9945
60
±20
Units
V
V
I D
Drain Current - Continuous
(Note 1a)
3.5
A
- Pulsed
10
P D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2
1.6
1
0.9
W
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
? 1998 Fairchild Semiconductor Corporation
NDS9945 Rev.B
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NDS9948_02 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual 60V P-Channel PowerTrench MOSFET